Ultra-thin Ga nanosheets: analogues of high pressure Ga( iii )
Source abstract
Abstract
Ultra-thin Ga islands of β-Ga(110), high-pressure phase Ga(iii) and a new phase of stripe superstructure are obtained on Si(111). STM combined with theoretical calculations suggests that the stripe superstructure originates from Ga(iii) (001) with stacking rearrangement. This work provides a new strategy for synthesizing low-dimensional nanomaterials and accessing high pressure phases.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics
Beihang University
Beijing 100191
P. R. China
BUAA-UOW Joint Research Centre
Institute for Superconducting and Electronic Materials (ISEM)
Australian Institute for Innovative Materials (AIIM)
University of Wollongong
Wollongong
Australia
Funding
Beihang University
References (26)
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