Self-texturizing electronic properties of a 2-dimensional GdAu 2 layer on Au(111): the role of out-of-plane atomic displacement
Source abstract
Abstract
/Au(111) interface, is sufficient to locally open an energy gap of ∼0.5 eV at the Fermi level in an otherwise metallic layer. Additionally, this out-of-plane displacement of the Gd atoms patterns the character of the hybridized Gd-d states and shifts the center of mass of the Gd 4f multiplet proportionally to the lattice distortion. These findings demonstrate the close correlation between the electronic properties of the 2D-layer and its planarity. We demonstrate that the resulting template shows different chemical reactivities which may find important applications.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · nanoparticles nucleation surface interactions · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Departamento de Física de Materiales
Universidad del País Vasco
ES-20018 San Sebastián
Spain
Donostia International Physics Center
CNR-IOM DEMOCRITOS
Istituto Officina dei Materiali
Consiglio Nazionale delle Ricerche and SISSA
Trieste
Italy
Centro de Fisica de Materiales (CSIC-UPV/EHU) y Material Physics Center
Istituto Officina Materiali (CNR-IOM)
Laboratorio TASC
I-34149 Trieste
Dipartimento di Fisica
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