Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study
Source abstract
Abstract
The large non-saturating magnetoresistance (MR) of bulk WTe2 is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe2 bonded to graphene, through a WTe2/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe2. Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. Our findings illustrate a new route to enhancing the MR of WTe2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Computational Science Research Center
Beijing 100193
China
Department of Materials Science and Engineering
University of Utah
Hefei National Laboratory for Physical Sciences at the Microscale
Synergetic Innovation Center of Quantum Information and Quantum Physics
University of Science and Technology of China
Hefei
Salt Lake City
USA
Collaborative Innovation Center of Quantum Matter
Funding
China Postdoctoral Science Foundation · NSAF Joint Fund · National Natural Science Foundation of China · U.S. Department of Energy
References (33)
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