Ultra-sensitive tandem colloidal quantum-dot photodetectors
Source abstract
Abstract
The solution-processed PbSe colloidal quantum-dot (CQD) infrared photodetector with tandem architecture is proposed to address the high dark current issue. The electrical transport mechanism in tandem has been fundamentally changed in which the recombination of carriers at an intermediate layer becomes dominant rather than carriers hopping between nearest neighbors in CQD materials. As a result, the tandem photodetector exhibits ultra-high detectivities of 4.7 × 10(13) Jones and 8.1 × 10(13) Jones under 34 μW cm(-2) illumination at 1100 nm, at 275 K and 100 K, respectively.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Engineering Science and Mechanics
Pennsylvania State University
University Park, USA
China Tianchen Engineering Corporation
Tianjin, China
Shanghai Key Lab of Modern Optical System
University of Shanghai for Science and Technology
Shanghai, China
State Key Laboratory on Integrated Optoelectronics and College of Electronic Science Engineering
Jilin University
Changchun, Chin
References (19)
Show source-provided references
1. Jiang · J. Appl. Phys. · 2014 · 116 · 08430310.1063/1.4893897 ↗
2. Konstantos · Nature · 2006 · 442 · 18010.1038/nature04855 ↗
3. Clifford · Nat. Nanotechnol. · 2009 · 4 · 4010.1038/nnano.2008.313 ↗
4. Law · J. Am. Chem. Soc. · 2008 · 130 · 597410.1021/ja800040c ↗
5. Luther · ACS Nano · 2008 · 2 · 27110.1021/nn7003348 ↗
6. Sarasqueta · Adv. Funct. Mater. · 2011 · 21 · 16710.1002/adfm.201001328 ↗
7. Yu · Chem. Mater. · 2004 · 16 · 331810.1021/cm049476y ↗
8. Bang · Nanotechnology · 2006 · 17 · 97310.1088/0957-4484/17/4/022 ↗
9. Hu · Nanotechnology · 2012 · 23 · 37520210.1088/0957-4484/23/37/375202 ↗
10. A. Jha , Infrared Technology , Wiley , New York , 2000 , pp. 245–359
11. P. Bhattacharya , Semiconductor Optoelectronics Device , Prentice-Hall , Upper Saddle River, NJ , 1997 , pp. 245–367
12. Gong · Science · 2009 · 325 · 166510.1126/science.1176706 ↗
13. Jarosz · Phys. Rev. B: Condens. Matter · 2004 · 70 · 19532710.1103/PhysRevB.70.195327 ↗
14. Ginger · J. Appl. Phys. · 2000 · 87 · 136110.1063/1.372021 ↗
15. N. F. Mott and E. A.Davis , Electronic Processes in Non-Crystalline Materials , Clarendon, New York , 1979
16. Sarasqueta · Chem. Mater. · 2010 · 22 · 349610.1021/cm1006229 ↗
17. Dedigamuwa · Appl. Phys. Lett. · 2009 · 95 · 12210710.1063/1.3233926 ↗
18. Romero · Phys. Rev. Lett. · 2005 · 95 · 15680110.1103/PhysRevLett.95.156801 ↗
19. Kang · Nano Lett. · 2011 · 11 · 388710.1021/nl2020153 ↗