journal article·2025

A polarization-sensitive photodetector based on a b-AsP/In 2 Se 3 heterostructure

Le Ju, Binqian Zou, Suofu Wang, Song Sun, Tao Han, Feng Li, Xingyuan Hou, Min Zhang, Fei Ding, Lei Shan, Mingsheng Long

Nanoscale· Volume 17· Issue 43
Publisher page

Abstract

The b-AsP/In 2 Se 3 heterostructure phototransistor device exhibits excellent performance in solar-blind ultraviolet detection with a high photoresponsivity of 4129.3 A W −1 and a polarization dichroic ratio of ∼2.12.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Key Laboratory of Opto-Electronic Information Acquisition and Manipulation of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, PR of China

School of Chemistry and Chemical Engineering, Anhui University, Hefei, Anhui, 230601, P. R. China

College of Mechanical Engineering, Jiaxing University, No.899 Guangqiong Road, Jiaxing City, Zhejiang Province 314001, People's Republic of China

Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany

Funding

National Natural Science Foundation of China

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