Design and simulation of mid-wavelength InAs/GaSb type-II superlattice avalanche photodiodes
Source abstract
Abstract
A. At an operating temperature of 300 K, the SACM APD demonstrates a gain of 73.4 with a reverse bias voltage of 35 V, surpassing the performance of the SAM structure. These findings provide critical insights for the design of high-performance mid-wave infrared detectors, highlighting the potential of T2SL-APDs in achieving high gain and low dark current.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Advanced Optical Sensing Technologies · Advanced X-ray and CT Imaging
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Instrument Science and Opto-electronics Engineering, Beijing Information Science and Technology University, Beijing 10096, China
North China Research Institute of Electro-Optics, Beijing 100015, China
Funding
National Natural Science Foundation of China · China Association for Science and Technology
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