Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy
Source abstract
Abstract
The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Silicon Carbide Semiconductor Technologies · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Science and Technology on Thermostructural Composite Materials Laboratory
Northwestern Polytechnical University
Xi'an, China
References (17)
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