Ultrahigh photosensitivity of the polar surfaces of single crystalline ZnO nanoplates
Source abstract
Abstract
Single crystalline ZnO nanoplatelet structures were synthesized via a hydrothermal process on the surface of GaN microparticles. Growth of ZnO seeded on the GaN surface promoted faster growth along the directions within the basal plane of the ZnO crystal structure, resulting in the formation of 2-dimensional nanoplates with a thickness less than a few tens of nanometers at most. Electrical conduction across an individual nanoplate was measured and found to be extremely sensitive to UV illumination and the surrounding atmospheric environment. Such electrical behaviors of the nanoplates were attributed to the dominance of the polar (0001) surfaces and the adsorption and desorption of the ambient gas molecules on these surfaces. Their coupling with conduction electrons near the surface is the critical factor responsible for the highly sensitive electrical properties of the nanoplate. Virtually the entire volume of the nanoplates is under the influence of the surface adsorbed molecules, which changes the electrical properties of the nanoplates extensively, depending on their environmental conditions. Combining the very high photocurrent to dark current ratio and the high effective resistance of the ZnO nanoplates reported in the present study, ultrasensitive photo-devices operating at very low power can be expected with the use of 2-dimensional nanoplates.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Emerging Materials Science
Daegu Gyeongbuk Institute of Science and Technology (DGIST)
Daegu 42988
South Korea
Smart Textile Convergence Research Group
Department of Mechanical Engineering & Materials Science and Engineering Program
Research Center for Emerging Materials
Funding
National Research Foundation of Korea
References (31)
Show source-provided references
1. Tian · Nat. Mater. · 2003 · 2 · 82110.1038/nmat1014 ↗
2. Djurisic · Small · 2006 · 2 · 94410.1002/smll.200600134 ↗
3. Wang · Mater. Today · 2004 · 7 · 2610.1016/S1369-7021(04)00286-X ↗
4. Djurisic · J. Mater. Chem. · 2012 · 22 · 652610.1039/c2jm15548f ↗
5. Park · Adv. Mater. · 2004 · 16 · 8710.1002/adma.200305729 ↗
6. Özgür · J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
7. Schmidt-Mende · Mater. Today · 2007 · 10 · 4010.1016/S1369-7021(07)70078-0 ↗
8. Alenezi · Nanoscale · 2014 · 6 · 23510.1039/C3NR04519F ↗
9. Kong · Science · 2004 · 303 · 134810.1126/science.1092356 ↗
10. Wang · Mater. Sci. Eng., R · 2009 · 64 · 3310.1016/j.mser.2009.02.001 ↗
11. Dutta · Prog. Mater. Sci. · 2009 · 54 · 8910.1016/j.pmatsci.2008.07.002 ↗
12. Baruah · J. Sol-Gel Sci. Technol. · 2009 · 50 · 45610.1007/s10971-009-1917-2 ↗
13. Kaneti · Phys. Chem. Chem. Phys. · 2014 · 16 · 1147110.1039/C4CP01279H ↗
14. Guillemin · J. Phys. Chem. C · 2012 · 116 · 2510610.1021/jp308643w ↗
15. Fan · J. Nanosci. Nanotechnol. · 2005 · 5 · 156110.1166/jnn.2005.182 ↗
16. Hong · Nano Lett. · 2012 · 12 · 57610.1021/nl203033h ↗
17. Li · Mater. Lett. · 2016 · 185 · 16110.1016/j.matlet.2016.08.021 ↗
18. Kang · AIP Adv. · 2016 · 6 · 02511010.1063/1.4942113 ↗
19. Qiu · J. Mater. Chem. · 2010 · 20 · 100110.1039/B917305F ↗
20. Lee · J. Mater. Chem. B · 2014 · 2 · 231110.1039/C4TB00248B ↗
21. Strano · J. Phys. Chem. C · 2014 · 118 · 2818910.1021/jp507496a ↗
22. Alenezi · Langmuir · 2014 · 30 · 391310.1021/la500143w ↗
23. Dai · ACS Appl. Mater. Interfaces · 2013 · 5 · 934410.1021/am403609y ↗
24. Sahin · Appl. Surf. Sci. · 2014 · 303 · 9010.1016/j.apsusc.2014.02.083 ↗
25. Liu · Nat. Commun. · 2014 · 5 · 400710.1038/ncomms5007 ↗
26. Soci · Nano Lett. · 2007 · 7 · 100310.1021/nl070111x ↗
27. Tachikawa · J. Phys. Chem. C · 2007 · 111 · 525910.1021/jp069005u ↗
28. Juniga-Perez · Appl. Phys. Rev. · 2016 · 3 · 04130310.1063/1.4963919 ↗
29. Song · Adv. Mater. · 2008 · 20 · 446410.1002/adma.200801190 ↗
30. Fujimura · J. Cryst. Growth · 1993 · 130 · 26910.1016/0022-0248(93)90861-P ↗
31. Yan · Appl. Phys. Lett. · 2010 · 96 · 05310810.1063/1.3297905 ↗