journal article·2020Open access

Valley depolarization in monolayer transition-metal dichalcogenides with zone-corner acoustic phonons

Tae-Young Jeong, Soungmin Bae, Seong-Yeon Lee, Suyong Jung, Yong-Hoon Kim, Ki-Ju Yee

Nanoscale· Volume 12· Issue 44

Abstract

Although single-layer transition-metal dichalcogenides with novel valley functionalities are a promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on pump-probe experiments performed for MoSe2 and WSe2 monolayers and corroborating analysis from density functional calculations, we demonstrate that coherent phonons at the K-point of the Brillouin zone can effectively mediate the valley transfer of electron carriers. In the MoSe2 monolayer case, we identify this mode as the flexural acoustic ZA(K) mode, which has broken inversion symmetry and thus can enable electron spin-flip during valley transfer. On the other hand, in the monolayer WSe2 case where spin-preserving inter-valley relaxations are preferred, coherent LA(K) phonons with even inversion symmetry are efficiently generated. These findings establish that while the specifics of inter-valley relaxations depend on the spin alignments of energy bands, the K-point phonons should be taken into account as an effective valley depolarization pathway in transition metal dichalcogenide monolayers.
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Research context

OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics

Chungnam National University

Daejeon 34134

Republic of Korea

Quantum Technology Institute

School of Electrical Engineering

Korea Advanced Institute of Science and Technology (KAIST)

Daejeon 34141

Korea

Korea Research Institute of Standards and Science

Daejeon 34113

Funding

National Research Foundation of Korea · Korea Institute for Advancement of Technology

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