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journal article·2023

Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?

Xiangwei Qu, Wenbo Liu, Depeng Li, Jingrui Ma, Mi Gu, Siqi Jia, Guohong Xiang, Xiao Wei Sun

Nanoscale· Volume 15· Issue 7
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Source abstract

Abstract

-induced charge transfer. We further investigate the charge transfer mechanism and its effect on the performance of QLEDs. Finally, we show the photodegradation of the pristine QD-ETL film under UV irradiation. Our work bridges interfacial exciton quenching and high performance in hybrid QLEDs and highlights the significance of encapsulation in QLEDs.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China

Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen 518055, China

Funding

Special Project for Research and Development in Key areas of Guangdong Province · Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting · National Key Research and Development Program of China

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