Volatile HRS asymmetry and subloops in resistive switching oxides
Source abstract
Abstract
/Pt devices. The effect is not limited to one oxide or electrode material but is observed with different magnitudes (up to 10× current change) in several oxide systems. These observations describe an additional state variable of the memristive system that is controlled in a highly polarity dependent manner.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Materials in Electrical Engineering and Information Technology II (IWE2)
RWTH Aachen University
52056 Aachen
Germany
Hewlett Packard Labs
Palo Alto
USA
Peter Gruenberg Institute
Forschungszentrum Juelich GmbH
52425 Juelich
Funding
Deutsche Forschungsgemeinschaft
References (40)
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