A new route toward light emission from Ge: tensile-strained quantum dots
Source abstract
Abstract
The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Quantum Structures and Devices · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Functional Materials for Informatics
Shanghai Institute of Microsystem and Information Technology
CAS
Shanghai, China
University of Chinese Academy of Sciences
State Key Laboratory of Information Photonics and Optical Communications
Ministry of Education
Beijing University of Posts and Telecommunications
Beijing, China
Department of Microtechnology and Nanoscience
References (29)
Show source-provided references
1. Saraswat · Mater. Sci. Eng., B · 2006 · 135 · 24210.1016/j.mseb.2006.08.014 ↗
2. Jain · Semicond. Sci. Technol. · 2001 · 16 · R6710.1088/0268-1242/16/7/201 ↗
3. Michel · Nat. Photon. · 2010 · 4 · 52710.1038/nphoton.2010.157 ↗
4. Boucaud · Photonics Res. · 2013 · 1 · 10210.1364/PRJ.1.000102 ↗
5. Liu · Opt. Lett. · 2010 · 35 · 67910.1364/OL.35.000679 ↗
6. Posthuma · IEEE Trans. Electron Devices · 2007 · 54 · 121010.1109/TED.2007.894610 ↗
7. Fischetti · J. Appl. Phys. · 1996 · 80 · 223410.1063/1.363052 ↗
8. Bai · J. Appl. Phys. · 2008 · 10410.1063/1.3005886 ↗
9. Ishikawa · Appl. Phys. Lett. · 2003 · 82 · 204410.1063/1.1564868 ↗
10. Jakomin · Appl. Phys. Lett. · 2011 · 9810.1063/1.3559231 ↗
11. Huo · Appl. Phys. Lett. · 2011 · 98 · 01111110.1063/1.3534785 ↗
12. de Kersauson · J. Appl. Phys. · 2013 · 11310.1063/1.4804266 ↗
13. Fang · Appl. Phys. Lett. · 2007 · 90
14. Nam · Appl. Phys. Lett. · 2012 · 10010.1063/1.3699224 ↗
15. Nam · Opt. Express · 2011 · 19 · 2586610.1364/OE.19.025866 ↗
16. Boztug · Small · 2013 · 9 · 62210.1002/smll.201201090 ↗
17. Sanchez-Perez · Proc. Natl. Acad. Sci. U. S. A. · 2011 · 108 · 1889310.1073/pnas.1107968108 ↗
18. Lim · Opt. Express · 2009 · 17 · 1635810.1364/OE.17.016358 ↗
19. El Kurdi · Appl. Phys. Lett. · 2010 · 9610.1063/1.3297883 ↗
20. Kirstaedter · Electron. Lett. · 1994 · 30 · 141610.1049/el:19940939 ↗
21. Asada · IEEE J. Quantum Electron. · 1986 · 22 · 191510.1109/JQE.1986.1073149 ↗
22. Bimberg · IEEE J. Sel. Top. Quantum Electron. · 1997 · 3 · 19610.1109/2944.605656 ↗
23. Kirstaedter · Appl. Phys. Lett. · 1996 · 69 · 122610.1063/1.117419 ↗
24. Mi · Electron. Lett. · 2006 · 42 · 12110.1049/el:20063582 ↗
25. Herring · Phys. Rev. · 1956 · 101 · 94410.1103/PhysRev.101.944 ↗
26. Hÿtch · Ultramicroscopy · 1998 · 74 · 13110.1016/S0304-3991(98)00035-7 ↗
27. S. P. Nikanorov and B. K.Kardashev, Elasticity and Dislocation Inelasticity of Crystalls, Nauka Publ. House, Russian, 1985
28. Nichols · Solid State Commun. · 1980 · 36 · 66710.1016/0038-1098(80)90205-7 ↗
29. Van De Walle · Phys. Rev. B: Condens. Matter · 1989 · 39 · 187110.1103/PhysRevB.39.1871 ↗