Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array
Source abstract
Abstract
N/AlN/sapphire thin film and the photoluminescence (PL) behavior of the AlGaN/GaN MQWs contribute to an improved understanding of the light extraction mechanism of PhC patterned UV-LEDs. Raman spectra also demonstrated the strain relaxation inside the MQW after nanostructure fabrication and thermal annealing. This study provides a pathway towards higher efficiency UV-LEDs with the help of a periodicity-wavelength matched nanostructure array.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Ningbo Institute of Materials Technology and Engineering
Chinese Academy of Sciences
Ningbo 315201
China
Semiconductor Lighting Technology Research and Development Center
Institute of Semiconductors
Beijing 100083
Department of Electrical and Electronic Engineering
Faculty of Science and Engineering
The University of Nottingham Ningbo China
Funding
Natural Science Foundation of Ningbo · National Natural Science Foundation of China · China Postdoctoral Science Foundation
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