Study of influence on micro-fabricated resistive switching organic ZrO2 array by C-AFM measurement

In this paper, a comparison of the interfacial electronic properties between Pt/Ir conductive atomic force microscopy (C-AFM) tip and ZrO2 organic array was carried out. A uniformed ZrO2 array was fabricated with a mean diameter of around 1 μm using laser interference lithography. A C-AFM measurement set-up was built up. The I–V curve was directly measured of the organic ZrO2 array which shows a resistive switching characteristic by C-AFM measurement. The set voltage is 18.0 V and the reset voltage is −5.0 V. After the Pt layer was coated on the ZrO2 array, the set voltage decreases to 0.8 V and the reset voltage decreases to −2.2 V. This result shows that Pt layer can prevent the potential drop effectively. The electron barrier height between Pt/Ir C-AFM tip and organic ZrO2 array was enhanced by sputtering Pt layer on the ZrO2 organic array.