Multiple implantation of29Si+ in semi-insulating GaAs and its characterisation
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (7)
Show source-provided references
1. Asbeck P M, Miller D L, Bancock E J and Kirkpatrick C J 1983IEEE Trans. Electron Devices Lett. EDL-4 8110.1109/EDL.1983.25656 ↗
2. Bujatti M and Marcelje F 1981IEEE Proc. 128 97
3. Kasahara J, Arai M and Watanabe N 1979J. Electrochem. Soc. (Solid State Sci. Tech) 126 199710.1149/1.2128842 ↗
4. Lindhard J, Scharff M and Schiott H 1963K. Dan. Vidensk. Selsk. Mat. Fys. Medd. 33 14
5. Sakashita T, Tamura A, Yoshioka Y and Omuma T 1985Jpn. J. Appl. Phys. 24 L48510.1143/JJAP.24.L485 ↗
6. Shino T, Arai K, Yamada Y, Tonita N and Yanagawa S 1985IEEE Trans. Electron Devices ED-32 230110.1109/T-ED.1985.22274 ↗
7. Thomas R N, Hobgood H M, Eldridge G W, Barrett D L, Braggins T T, Ta L B and Wang S K 1984 inSemiconductor and semimetals (eds) R K Willardson and A C Beer (New York: Academic Press) vol. 20, p. 47