Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes
Source abstract
Abstract
Prudhvi Ram Peri, Kevin Hatch, Daniel Messina, Kai Fu, Yuji Zhao, Robert Nemanich, David Smith; Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
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References (6)
Show source-provided references
1. 10.1364/AOP.10.00024610.1364/AOP.10.000246 ↗
2. 10.1063/1.12126810.1063/1.121268 ↗
3. 3. Oka, T. , Ueno, Y. , Ina, T. , and Hasegawa, K. , (2014).
4. 6. This work was supported by ARPA-E award DE-AR0000868. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
5. 10.1063/1.186111310.1063/1.1861113 ↗
6. 10.1109/TED.2014.236086110.1109/TED.2014.2360861 ↗