In situ HR-TEM and Simulation of Si Field Emitter Tips under Field Evaporation
Source abstract
Abstract
Understanding of atomistic processes involved with the field evaporation of atoms from field emitter tips is crucial to achieve atomic precision in microscopic manipulation and atom probe tomography (APT). The applied electric field in APT is in the order of ~10 10 V/m which is sufficient to induce the ionization of surface atoms followed by ionic emission from the surface. However, what is going on at the nano to atomic scale, first, when an electric field applies, and second, when the field increases to facilitate field evaporation, is still elusive.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Materials Characterization Techniques · Ion-surface interactions and analysis · Advanced Surface Polishing Techniques
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References (6)
Show source-provided references
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6. The authors acknowledge financial support from the Air Force Office of Scientific Research, Award Number FA9550-14-1-0249 and computational support by the Ohio Supercomputer Center, Grant Number PAS0072. CO gratefully acknowledges support from the Alexander von Humboldt Foundation through the Feodor-Lynen research fellowship. A portion of the research was performed using EMSL (grid.436923.9), a DOE Office of Science User Facility sponsored by the Office of Biological and Environmental Research.