A Simple Method to Decouple Redeposition-Related Artifacts from Real Defects in the Failure Analysis of Silicon Photonics Modules
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Abstract
Journal Article A Simple Method to Decouple Redeposition-Related Artifacts from Real Defects in the Failure Analysis of Silicon Photonics Modules Get access Fauzia Khatkhatay, Fauzia Khatkhatay GLOBALFOUNDRIES, Inc., Malta, NY, U.S.A. Corresponding author: fauzia.khatkhatay@globalfoundries.com Search for other works by this author on: Oxford Academic Google Scholar Pradip Sairam Pichumani Pradip Sairam Pichumani GLOBALFOUNDRIES, Inc., Malta, NY, U.S.A. Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 25, Issue S2, 1 August 2019, Pages 726–727, https://doi.org/10.1017/S1431927619004367 Published: 01 August 2019
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques · Industrial Vision Systems and Defect Detection
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References (4)
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1. The authors would like to thank Scott Darling for the mechanical cross section and their imaging.
2. Knights
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4. Hrnčíř · ISTFA · 2016 · 642