Resistive Switching Studies of ReRAM Devices by In-Situ TEM

Gemma Martín; Mireia B. González; Aïda Varea; Oriol Blázquez; Giovanni Vescio; Francesca Campabadal; Sergi Hernández; Albert Cirera; Blas Garrido; Sònia Estradé; Francesca Peiró; Albert Cornet

doi:10.1017/s1431927618016082

journal article·2019-02Open access

Resistive Switching Studies of ReRAM Devices by In-Situ TEM

Gemma Martín, Mireia B. González, Aïda Varea, Oriol Blázquez, Giovanni Vescio, Francesca Campabadal, Sergi Hernández, Albert Cirera, Blas Garrido, Sònia Estradé, Francesca Peiró, Albert Cornet

Microscopy and Microanalysis· Volume 25· Issue S1

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Abstract

Gemma Martín, Mireia B González, Aïda Varea, Oriol Blázquez, Giovanni Vescio, Francesca Campabadal, Sergi Hernández, Albert Cirera, Blas Garrido, Sònia Est

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

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OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices

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