Imaging of Electric Fields at the GaN/Ni Interface Using Electron Beam Induced Current in a Scanning Transmission Electron Microscope
Source abstract
Abstract
Zoey Warecki, Vladimir Oleshko, Andrew Armstrong, Kimberly Collins, A Alec Talin, John Cumings; Imaging of Electric Fields at the GaN/Ni Interface Using El
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
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References (4)
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1. 10.1063/1.33166710.1063/1.331667 ↗
2. The authors acknowledge funding from Nanostructures for Electrical Energy Storage (NEES), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, the National Science Foundation Graduate Research Fellowship Program under Grant No. DGE 1322106, and support from NIST Grant No. 70NANB15H218. Sandia National Laboratories is a multi-mission laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC0494AL85000. ZW thanks Dr. Wen-An Chiou and Dr. Sz-Chian Liou for their advice.
3. 10.1149/2.0251602jss10.1149/2.0251602jss ↗
4. Grim · ZNaturforsch, A J. Phys. Sci · 2016 · 12 · 89