(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications
Source abstract
Abstract
D F Reyes, A D Utrilla, T Ben, J J Saborido, J M Ulloa, G Bárcena-Gonzálz, M P Guerrero-Lebrero, E Guerrero, D Gonzalez; (S)TEM Analysis of the Strain and
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
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References (5)
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1. We acknowledge the Spanish MICINN-MINECO for funding through project MAT2013- 47102-C2, and SCCYT-UCA for technical support.
2. 10.1103/PhysRevLett.96.22610610.1103/PhysRevLett.96.226106 ↗
3. 10.1063/1.142142810.1063/1.1421428 ↗
4. 10.1063/1.367356310.1063/1.3673563 ↗
5. 10.1063/1.173603410.1063/1.1736034 ↗