Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT

CH Liebscher; A Stoffers; O Cojocaru-Mirédin; B Gault; C Scheu; G Dehm; D Raabe

doi:10.1017/s1431927616012253

journal article·2016-11Open access

Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT

CH Liebscher, A Stoffers, O Cojocaru-Mirédin, B Gault, C Scheu, G Dehm, D Raabe

Microscopy and Microanalysis· Volume 22· Issue S5

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Abstract

CH Liebscher, A Stoffers, O Cojocaru-Mirédin, B Gault, C Scheu, G Dehm, D Raabe; Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studi

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OpenAlex topics: Advanced Materials Characterization Techniques · Advanced Electron Microscopy Techniques and Applications · Electron and X-Ray Spectroscopy Techniques

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References (4)

Show source-provided references

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3. 10.1098/rspl.1887.016210.1098/rspl.1887.0162 ↗

4. 10.1016/0001-6160(87)90067-810.1016/0001-6160(87)90067-8 ↗