Characterizing InGaAs/GaAs quantum dots using low-kV FESEM imaging and EDS analysis at the nanometer scale
Source abstract
Abstract
Fang Zhou, Luyang Han, Simon Burgess, Xiaobing Li; Characterizing InGaAs/GaAs quantum dots using low-kV FESEM imaging and EDS analysis at the nanometer sca
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (3)
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1. Microscopy and Analysis, Nanotechnology Supplement Nov/Dec · 2015 · 4
2. 10.1126/science.290.5500.228210.1126/science.290.5500.2282 ↗
3. Phys. Rev. · 1999 · B 59 · 2070