Strain measurement in FinFET structures with epitaxially grown SiGe on source/drain region by nano beam diffraction (NBD) method
Source abstract
Abstract
Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques · Advanced Surface Polishing Techniques
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References
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