Characterization of Graphene Directly Grown at Ni/SiO2 Interface Using Inductively Coupled Chemical Vapor Deposition (ICP-CVD) at a Low Temperature
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Abstract
Dibyesh Shrestha, Grayson Kolar, Jun Jiao; Characterization of Graphene Directly Grown at Ni/SiO2 Interface Using Inductively Coupled Chemical Vapor Deposi
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Graphene research and applications · Ion-surface interactions and analysis · Semiconductor materials and devices
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References (3)
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1. Nguyen · Applied Physics Letters · 2014 · 104
2. The authors would like to thank Intel, Oregon Metal Initiative, and NSF under award No. ECS-1711994 for their support.
3. 10.1039/c1cp22347j10.1039/c1cp22347j ↗