journal article·1998-06

Applications of Ion Microscopy and In Situ Electron Microscopy to the Study of Electronic Materials and Devices

R. Hull, J. Demarest, D. Dunn, E.A. Stach, Q. Yuan

Microscopy and Microanalysis· Volume 4· Issue 3
Publisher page

Abstract

We discuss the application of ion microscopy and in situ electron microscopy to the study of electronic and optical materials and devices. We demonstrate how the combination of in situ transmission electron microscopy and focused ion beam microscopy provides new avenues for the study for such structures, enabling extension of these techniques to the study of dopant distributions, nanoscale stresses, three-dimensional structural and chemical reconstruction, and real-time evolution of defect microstructure. We also discuss in situ applications of thermal, mechanical, electrical, and optical stresses during transmission electron microscopy imaging.
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Research context

OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Integrated Circuits and Semiconductor Failure Analysis · Advanced Electron Microscopy Techniques and Applications

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