Electron Tomographic Characterization of ErSi2 and GexSi1-x Nanoparticles Prepared by Doping of 4H-SiC
Source abstract
Abstract
Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and interfaces · Electron and X-Ray Spectroscopy Techniques · Silicon Carbide Semiconductor Technologies
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