TEM Investigation on Dislocation Density Reduction by In Situ Deposited SiN Intermediate Layers in MOVPE Grown AlGaNlGaN Heterostructures on Sic and A1203 Substrates
Source abstract
Abstract
K Engl, M Beer, J Zweck, S Miller, S Bader, H Lugauer, G Brüderl, A Lell, V Härle; TEM Investigation on Dislocation Density Reduction by In Situ Deposited
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
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