Quantitative Analysis of Microstructures by Secondary Ion Mass Spectrometry
Source abstract
Abstract
The focus of this review is on trace-element quantitation of microstructures in solids. This review is aimed at the nonspecialist who wants to know how secondary ion mass spectrometry (SIMS) quantitation is achieved. Despite 35 years of SIMS research and applications, SIMS quantitation remains a fundamentally empirical enterprise and is based on standards. The most used standards are “bulk standards”—solids with a homogeneous distribution of a trace element—and ion-implanted solids. The SIMS systematics of bulk standards and ion-implanted solids are reviewed.
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Research context
OpenAlex topics: Ion-surface interactions and analysis · Analytical chemistry methods development · Nuclear materials and radiation effects
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References (2)
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1. Wilson, R.G. , Stevie, F.A. , & Magee, C.W. (1989).Secondary Ion Mass Spectrometry.Chichester, UK:John Wiley & Sons.[Note: The proceedings volumes of the biennial InternationalConference on Secondary Ion Mass Spectrometry—specifically, SIMS IIthrough SIMS XIV—are an indispensable resource of diverse SIMSquantitation topics. Space limitations of this review prevent properbibliographic citation of these volumes.]
2. Sobers, R.C., Jr. , Franzreb, K. , & Williams, P. (2004).Quantitative measurement of O/Si ratios inoxygen-sputtered silicon using 18O implant standards.Appl Surf Sci 231–232,729–733.10.1016/j.apsusc.2004.03.033 ↗