Strain Measurements at a NiSi/Si Interface Using STEM-CBED: A Quantifaction Method for Stress Relaxation During TEM Lamella Preparation
Source abstract
Abstract
R Pantel, L Clément, J L Rouvière, LFTz Kwakman; Strain Measurements at a NiSi/Si Interface Using STEM-CBED: A Quantifaction Method for Stress Relaxation D
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor materials and interfaces · Silicon and Solar Cell Technologies · Force Microscopy Techniques and Applications
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