Site Specific TEM Specimen Preparation using an FIB/TEM System
Source abstract
Abstract
Abstract The focused ion beam(FIB) technique, developed for the microelectronics industry has become a major method for site specific transmission electron microscopy(TEM) specimen preparation in a wide range of materials[l]. The FIB lift-out technique has improved the specimen preparation procedures by removing complicated initial fabrication required prior to the FIB milling[2]. However, conventional FIB techniques are still having increased difficulty in meeting failure analysis needs from high technology industries such as microelectronics. We have developed a site specific TEM specimen preparation method using a combination of an FIB instrument and an intermediate voltage TEM equipped with a scanning attachment [3]. In this method, the specimen is mounted on an FIB-TEM compatible specimen holder, so that localization of the specific site can be carried out in the FIB and TEM using the same holder. The scanning electron imaging mode may be used to observe surface structures of the milled area, and the scanning transmission electron microscopy(STEM) mode may be used to observe structures inside of the milled surface.
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Research context
OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Advanced Electron Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis
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Affiliations
Hitachi Science Systems, Ltd. , 882 Ichige, Hitachinaka, 312-8504, Japan
Instruments Division, Hitachi Ltd. , 882 Ichige, Hitachinaka, 312-8504, Japan
Central Research Laboratory Hitachi Ltd. , Kokubunji, 185-8601, Japan
References (5)
Show source-provided references
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2. Gianuzzi · Mat.Res.Soc.Symp.Proc. · 1997 · 480 · 1910.1557/PROC-480-19 ↗
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4. Kamino · Proc. Microscopy and Microanalysis · 1999 · 914
5. Ohnishi · Proc. 25th Int. Symp. for Testing and Failure Analysis · 1999 · 449