Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films
Source abstract
Abstract
Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films
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Source: crossref · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Electron and X-Ray Spectroscopy Techniques · GaN-based semiconductor devices and materials
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