Quantitative misfit dislocation characterization with electron channeling contrast imaging
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Abstract
Ari Blumer, Marzieh Baan, Zak Blumer, Jacob Boyer, Tyler J Grassman; Quantitative misfit dislocation characterization with electron channeling contrast ima
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Advanced Electron Microscopy Techniques and Applications · Electron and X-Ray Spectroscopy Techniques
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References (6)
Show source-provided references
1. Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy,10.1063/1.3310479 ↗
2. Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis,10.1017/S1431927619001740 ↗
3. Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures10.1109/JPHOTOV.2014.2379111 ↗
4. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area,10.1063/1.342834 ↗
5. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging,10.1063/1.4883371 ↗
6. Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization,