Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy
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Abstract
Ping Lu, Evan Anderson, Scott Schmucker, Fabian Pena, Esther Frederick, Jeffrey Ivie, Ezra Bussmann, Deanna Lopez, Lisa Tracy, Tzu-Ming Lu, George Wang, Da
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Source: openalex_inverted_index · Quality: short
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OpenAlex topics: Advanced Electron Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
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References (6)
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1. 10.1017/S143192761401324510.1017/S1431927614013245 ↗
2. Ward · Electronic Device Failure Analysis Mag · 2020 · 22 · 4
3. 6. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. This work was supported by the Laboratory Directed Research and Development Program at Sandia National Laboratories and was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility.
4. 10.1016/j.ultramic.2012.03.01310.1016/j.ultramic.2012.03.013 ↗
5. 10.1038/srep0394510.1038/srep03945 ↗
6. 10.1063/1.499863910.1063/1.4998639 ↗