Thickness-Dependent Defect Evolution in GaAs0.92Sb0.08/GaAs Heterostructures
Source abstract
Abstract
Abhinandan Gangopadhyay, Aymeric Maros, Nikolai Faleev, David J Smith; Thickness-Dependent Defect Evolution in GaAs0.92Sb0.08/GaAs Heterostructures, Micros
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (4)
Show source-provided references
1. 10.1063/1.34418310.1063/1.344183 ↗
2. 10.1103/PhysRevLett.78.501410.1103/PhysRevLett.78.5014 ↗
3. 10.1063/1.496775510.1063/1.4967755 ↗
4. This work was supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895. The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.