Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing
Source abstract
Abstract
Abhas Mehta, Qingxiao Wang, Sam Shichijo, MJ Kim; Characterization of GaN E-mode HEMT Devices by In-Situ STEM Electrical Biasing, Microscopy and Microanaly
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Texas at Dallas , Material Science and Engineering, Richardson, TX, USA
King Abdullah University of Science and Technology , Thuwal, Saudi Arabia
University of Texas at Dallas , Electrical and Computer Engineering, Richardson, TX, USA
References (5)
Show source-provided references
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4. Mei · IEEE Electron Device Lett · 2019 · 40
5. He · Appl. Phys. Lett · 2020 · 116