Growth Mechanism of (111)-Textured 3C-SiC Films on Si(100) Substrates
Source abstract
Abstract
V Radmilovic, Di Gao, R Maboudian, U Dahmen; Growth Mechanism of (111)-Textured 3C-SiC Films on Si(100) Substrates, Microscopy and Microanalysis, Volume 9,
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Copper Interconnects and Reliability
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