New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future

Journal Article New FESEM Design for 1nm at 1kV Imaging, EDS and BSE Nanoanalysis, and a Discussion of Diffraction Limits, Depth of Field and the Future Get access E D Boyes E D Boyes DuPont Company, CR&D, PO Box 80356-383, Wilmington, DE 19880-0356, USA Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 8, Issue S02, 1 August 2002, Pages 122–123, https://doi.org/10.1017/S1431927602101930 Published: 01 November 2002