In-situ Ion Irradiation and Recrystallization in Highly Structured Materials
Source abstract
Abstract
Structured materials represent a challenge to decouple their fundamental defect and annihilation mechanisms that largely influence their defect accumulation rates under extreme environments Open scientific questions remain on the relative defect recovery rates in these materials, including effects of local density, connected porosity, and defect content in largely highly oriented twodimensional materials, such as graphite. Pending the atomic arrangements, incident energies, and chemistries, there are further varying outcomes on whether ion-induced defects can be annealed in the vertical, horizontal, or combination axes. Current post analysis TEM studies are not enough to support and report a conclusive understanding of the creation and annihilation of ion-induced defects and subsequent annealing mechanisms in graphite and similar anisotropic materials. Atomic level in situ characterization can begin to these answer questions, as well as augment our ongoing atomistic and first principles-based understanding of radiation damage.
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Research context
OpenAlex topics: Fusion materials and technologies · Electronic and Structural Properties of Oxides · Nuclear Materials and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (6)
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4. Work supported through the INL Laboratory Directed Research& Development (LDRD) Program under DOE Idaho Operations Office Contract DE-AC07-05ID14517. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.
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