journal article·2004-02

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

Masaki Takeguchi, Kazutaka Mitsuishi, Miyoko Tanaka, Kazuo Furuya

Microscopy and Microanalysis· Volume 10· Issue 1
Publisher page

Abstract

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: nanoparticles nucleation surface interactions · Magnetic properties of thin films · Surface and Thin Film Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (12)

Show source-provided references
1. Edington, J.W. (1976).Practical Electron Microscopy in Materials Science.Appendix 8. New York:Van Nostrand Reinhold Co.
2. Suematsu, T. , Tanaka, M. , Fujii, T. , Hashimoto, S. , Kumagai, Y. , & Hasegawa, F. (1997).Aggregation of monocrystalline β-FeSi2 by annealingand by Si overlayer growth.Jpn J Appl Phys 36,L1225–L1228.
3. Takeguchi, M. , Tanaka, M. , Yasuda, H. , & Furuya, K. (2001c).Analytical ultrahigh-vacuum transmission electron microscopyapplied to the studies of Pd2Si island formation on Si(111)surfaces.Surf Interface Anal 31,68–72.10.1002/sia.957 ↗
4. Takeguchi, M. , Mitsuishi, K. , Tanaka, M. , & Furuya, K. (2003).UHV-HRTEM observation of Pd clusters on Pd adsorbed Si (111) 1× 1 surface.Surf Sci 532–535,671–677.10.1016/S0039-6028(03)00204-8 ↗
5. Cherns, D. (1974).Direct resolution of surface atomic steps by transmissionelectron-microscopy.Phil Mag 30,549–556.10.1080/14786439808206580 ↗
6. Chen, Y. , Ohlberg, D.A.A. , & Williams, R.S. (2002).Nanowires of four epitaxial hexagonal silicides grown on Si(001).J Appl Phys 91,3213–3218.10.1063/1.1428807 ↗
7. Ichihashi, T. (1996).In situ observation of oxidation and etching of silicon byultra-high-vacuum transmission electron microscopy.Jpn J Appl Phys 35,6610–6613.10.1143/JJAP.35.6610 ↗
8. Ozawa, S. , Yamazaki, A. , Kobayashi, K. , Tanishiro, Y. , & Yagi, K. (1990).A new technique to produce clean and thin silicon films in situ ina UHV electron microscope for TEM-TED studies of surfaces.Jpn J Appl Phys 29,L655–L658.10.1143/JJAP.29.L655 ↗
9. Takeguchi, M. , Tanaka, M. , Yasuda, H. , & Furuya, K. (2001b).Real-time high-resolution transmission electron microscopyobservation of the growth process of (001) surfaces on ananometer-sized Si multiply twinned particle.Surf Sci 493,414–419.10.1016/S0039-6028(01)01247-X ↗
10. Tanaka, N. , Kimata, H. , & Kizuka, T. (1997).Time-resolved high-resolution electron microscopy of step-diffusionof tungsten atoms on MgO(001) surface.Surf Sci 386,216–221.10.1016/S0039-6028(97)00325-7 ↗
11. Takeda, S. , Koto, K. , Iijima, S. , & Ichihashi, T. (1997).Nanoholes on silicon surface created by electron irradiation underultrahigh vacuum environment.Phys Rev Lett 79,2994–2997.10.1103/PhysRevLett.79.2994 ↗
12. Takeguchi, M. , Tanaka, M. , Yasuda, H. , & Furuya, K. (2001a).Cross-sectional high-resolution transmission electron microscopyobservation of Si(113) 3 × 2 structure.Surf Sci 482–485,1385–1391.10.1016/S0039-6028(01)00852-4 ↗