In-Situ TEM Observation of Physical Degradation of AlGaN/GaN Devices under Applied Electric Field
Source abstract
Abstract
Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ion-surface interactions and analysis · Nanowire Synthesis and Applications
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References
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