Resistance-switching behaviour in ZnO–Nb 2 O 5 thin films for non-volatile memory application
Source abstract
Abstract
The microstructure and resistance switching characteristics of polycrystalline ZnO–Nb2O5 thin films prepared by the sol–gel method on indium tin oxide (ITO)/glass substrates at different annealing temperatures followed by annealing in oxygen have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The Pt/ZnO–Nb2O5/ITO/glass device exhibits reversible and steady bistable resistance switching behaviour with a narrow dispersion of resistance states and switching voltages. The resistance ratios of high-resistance state to low-resistance state were in the range of 1–2 orders of magnitude within 200 test cycles.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering, National United University, No. 1 Lien-Da, Kung-Ching Li, Miao-Li, 36003, Taiwan
References (14)
Show source-provided references
1. Zhuang · 2002 · 7 · 193
2. 10.1109/IEDM.2004.141922810.1109/IEDM.2004.1419228 ↗
3. 10.1016/S1369-7021(08)70119-610.1016/S1369-7021(08)70119-6 ↗
4. 10.1063/1.175418710.1063/1.1754187 ↗
5. 10.1016/0038-1101(68)90092-010.1016/0038-1101(68)90092-0 ↗
6. 10.1016/0038-1101(64)90131-510.1016/0038-1101(64)90131-5 ↗
7. 10.1016/0022-3093(70)90145-610.1016/0022-3093(70)90145-6 ↗
8. 10.1088/0034-4885/33/3/30610.1088/0034-4885/33/3/306 ↗
9. 10.1063/1.283485210.1063/1.2834852 ↗
10. 10.1109/LED.2005.84659210.1109/LED.2005.846592 ↗
11. 10.1063/1.200114610.1063/1.2001146 ↗
12. 10.1063/1.220464910.1063/1.2204649 ↗
13. 10.1016/S0040-6090(02)00083-410.1016/S0040-6090(02)00083-4 ↗
14. 10.1016/j.tsf.2005.04.07610.1016/j.tsf.2005.04.076 ↗