Nanographene device fabrication using atomic force microscope

A report is presented on the local anodic oxidation of graphene film prepared by chemical vapour deposition using contact mode atomic force microscopy. Raman spectroscopy was used to check the uniformity and thickness of large area graphene film. Various kinds of patterns such as lines, ribbons and further, more complex structures, such as hexagons, two‐terminal bar‐like devices, were written by varying the tip voltage from −6 to −12 V and the tip speed from 60 to 200 nm/s. It was found that one can easily write any kind of patterns by just manipulating the tip voltage and tip speed instead of concentrating on other factors such as controlled humidity conditions, applied force on the tip and tip current. Also, it is confirmed that with an increase in tip voltage and by slowing the tip movement during lithography, one can write very narrow and sharp patterns which are important factors for the fabrication of graphene‐based electronic devices.