p-Type Thermoelectricity of CrN Thin Films by Mg Doping

High Resolution Image Download MS PowerPoint Slide Because of the high power factor of chromium nitride (CrN) when used in thin films, it has recently attracted widespread attention as a promising high-performance thermoelectric material. Several reports have described studies of alloying or doping of CrN thin films to control and enhance the thermoelectric properties. Most reported CrN thin films have been fabricated as n-type charge carriers. Recent reports have described that nitrogen deficiency and alloying with V or W enhance n-type behavior and increase the power factor. Although V has fewer valence electrons than Cr, it has been shown not to change the carrier polarity. Our measurements have revealed that Mg-doped CrN thin films deposited using the reactive magnetron sputtering method change the polarity to p-type charge carriers, which is consistent with our calculations. The maximum observed power factors of the fabricated ∼8% Mg-alloyed CrN thin-film samples were 0.6 mW·m –1 ·K –2 at room temperature to 0.9 mW·m –1 ·K –2 at approximately 550 K.