journal article·2019-10-23Open access

Analysis of different conductive pastes to form the contact with the boron back surface field in PERT silicon solar cells

Izete Zanesco, Thais Crestani, Adriano Moehlecke, Moussa Ly

Materials Research Express· Volume 6· Issue 11

Abstract

The industrial production of solar cells of the PERC family is growing, because the potential to increase the efficiency due to the passivation of the rear face. The PERT solar cell is a cost-effective structure of the PERC configurations. The goal of this paper is to analyze the influence in the electrical parameters of different metal pastes used to form the contact with the boron back surface field of PERT solar cells passivated with silicon dioxide on both sides and developed with a cost-effective process. The boron doped BSF and phosphorus emitter were carried out with reduction of steps. Solar cells were processed with three different conductive pastes: (1) an aluminum paste (PV381), (2) a silver/aluminum paste (PV3N1) and (3) a silver paste (PV51G), with different viscosity and solids content. The pastes were produced by DuPont. The PV381 and PV3N1 pastes produced solar cells with the efficiency of 16.2% and 15.9%, respectively. The higher open circuit voltage was achieved with the aluminum paste, indicating that this paste is more effective to produce the selective back surface field. The PV51G paste is not suitable to form the rear contact.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · solar cell performance optimization · Photovoltaic System Optimization Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (35)

Show source-provided references
1. 10.1038/NENERGY.2015.1510.1038/NENERGY.2015.15 ↗
2. 10.1016/j.solmat.2015.06.05510.1016/j.solmat.2015.06.055 ↗
3. 10.1109/JPHOTOV.2019.289946010.1109/JPHOTOV.2019.2899460 ↗
4. Liu J · J. Phys. D: Appl. Phys. · 2018 · 51 · 1
5. ITRPV 2018 Results · International technology Roadmap for Photovoltaic · 2019
6. 10.1007/s40243-012-0001-y10.1007/s40243-012-0001-y ↗
7. 10.1016/j.physe.2015.03.02510.1016/j.physe.2015.03.025 ↗
8. 10.1039/C5EE03380B10.1039/C5EE03380B ↗
9. Burger B · 2019
10. 10.1016/j.egypro.2017.09.41210.1016/j.egypro.2017.09.412 ↗
11. 10.1016/j.solmat.2018.04.02910.1016/j.solmat.2018.04.029 ↗
12. 10.1149/1.212932110.1149/1.2129321 ↗
13. 10.18086/swc.2015.05.0110.18086/swc.2015.05.01 ↗
14. 10.4322/2176-1523.122910.4322/2176-1523.1229 ↗
15. Sun X · Mater. Res. Express · 2019 · 6
16. 10.1002/pip.277510.1002/pip.2775 ↗
17. 10.1016/j.egypro.2016.07.04610.1016/j.egypro.2016.07.046 ↗
18. 10.1016/j.solmat.2016.11.01810.1016/j.solmat.2016.11.018 ↗
19. Werner S · 33rd European PV Solar Energy Conf. and Exhibition · 2017 · 24
20. 10.1016/j.apsusc.2017.02.19510.1016/j.apsusc.2017.02.195 ↗
21. 10.1016/j.egypro.2017.09.27310.1016/j.egypro.2017.09.273 ↗
22. 10.1016/j.egypro.2012.05.00310.1016/j.egypro.2012.05.003 ↗
23. 10.1063/1.343707010.1063/1.3437070 ↗
24. 10.1109/JPHOTOV.2011.216186410.1109/JPHOTOV.2011.2161864 ↗
25. 10.1109/JPHOTOV.2014.236411710.1109/JPHOTOV.2014.2364117 ↗
26. 10.3934/matersci.2018.4.61410.3934/matersci.2018.4.614 ↗
27. 10.1063/1.497475210.1063/1.4974752 ↗
28. 10.1002/pip.93310.1002/pip.933 ↗
29. Zanesco I · Brazilian Patent · 2012
30. Kern W · Handbook of Semiconductor Wafer Cleanning Technology · 1993
31. Crestani T · Revista Brasileira de Energia Solar · 2016 · 8 · 5910.59627/rbens.2017v8i2.183 ↗
32. Crestani T · Actas de la XLI Reunión de Trabajo de la Asociación Argentina de Energías Renovables y Medio Ambiente · 2018 · 6 · 159
33. 10.1016/j.egypro.2016.07.12910.1016/j.egypro.2016.07.129 ↗
34. 10.1016/j.egypro.2014.08.07410.1016/j.egypro.2014.08.074 ↗
35. 10.1016/j.egypro.2013.07.28310.1016/j.egypro.2013.07.283 ↗