Comparative analysis of Ga₂O₃/In₂O₃ incorporation in (Co-ZnS/Se) chalcogenide composite materials

By comparing the basic properties of the new materials, the doping mechanism and design principles can be comprehended more clearly. The exploration and scientific assessment of applied fields for new compounds is still lacking. Here, a new material (In2O3/Ga2O3)0.1(Co)0.5(ZnS/Se)0.4 ceramics were fabricated via the solid-state sintering, and the thin films with same composition were obtained by PLD method at 25 °C-2 Pa and 800 °C-12 Pa. The crystal structure in ceramics but the amorphous structure in thin films was confirmed by XRD. The physics growth mode of island and layer-plus-island for this film were established. The morphology of the film was characterized by AFM and SEM. Chemical valence +3, +2 and +3, +3 of In, Ga and Co, respectively, were proved by XPS. Ga-Co, Ga/In-O and ZnS Bonds vibration information was tested by Raman spectra. The more abundant energy level and smaller optical band gap in (In2O3)0.1(Co)0.5(ZnS/Se)0.4 was reflected by optical properties. The better electric direction application potential in (Ga2O3)0.1(Co)0.5(ZnS/Se)0.4 was confirmed by Hall Effect testing. What's important, the ability to alter the basic properties of materials according to our requirement by changing the different doping elements had been achieved.