journal article·2015-01-26Open access

Structural and gasochromic properties of WO3films prepared by reactive sputtering deposition

S Yamamoto, T Hakoda, A Miyashita, M Yoshikawa

Materials Research Express· Volume 2· Issue 2

Abstract

The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO 3 ) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO 3 films were prepared on SiO 2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O 2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO 3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N 2 gas. It was found that (001)-oriented monoclinic WO 3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO 3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO 3 films revealed that (001)-oriented WO 3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (25)

Show source-provided references
1. 10.1016/S0927-0248(98)00196-210.1016/S0927-0248(98)00196-2 ↗
2. 10.1016/S0040-6090(02)00496-010.1016/S0040-6090(02)00496-0 ↗
3. 10.1016/j.tsf.2006.03.04510.1016/j.tsf.2006.03.045 ↗
4. Chen C L · EPL · 2013 · 101 · 1700610.1209/0295-5075/101/17006 ↗
5. Takano K · Japan. J. Appl. Phys. · 2007 · 46 · 631510.1143/JJAP.46.6315 ↗
6. 10.1016/j.nimb.2007.04.26110.1016/j.nimb.2007.04.261 ↗
7. Ranjbar M · J. Phys. D: Appl. Phys. · 2008 · 4110.1088/0022-3727/41/5/055405 ↗
8. 10.1016/j.nimb.2007.12.09210.1016/j.nimb.2007.12.092 ↗
9. 10.1016/j.tsf.2007.07.05510.1016/j.tsf.2007.07.055 ↗
10. 10.1016/j.snb.2010.01.02110.1016/j.snb.2010.01.021 ↗
11. 10.1007/s11581-012-0683-210.1007/s11581-012-0683-2 ↗
12. 10.1016/j.snb.2010.01.04010.1016/j.snb.2010.01.040 ↗
13. 10.1016/S0013-4686(01)00379-610.1016/S0013-4686(01)00379-6 ↗
14. Chen H · Nanotechnology · 2007 · 18
15. 10.1016/j.nimb.2007.11.01610.1016/j.nimb.2007.11.016 ↗
16. 10.1016/S0926-860X(03)00104-210.1016/S0926-860X(03)00104-2 ↗
17. 10.1016/j.ijhydene.2003.10.00810.1016/j.ijhydene.2003.10.008 ↗
18. 10.1016/j.apcata.2005.01.01010.1016/j.apcata.2005.01.010 ↗
19. 10.1016/j.ijhydene.2005.11.01410.1016/j.ijhydene.2005.11.014 ↗
20. 10.1016/j.apsusc.2010.12.07910.1016/j.apsusc.2010.12.079 ↗
21. 10.1016/j.jpcs.2012.01.01710.1016/j.jpcs.2012.01.017 ↗
22. 10.1016/j.apsusc.2007.02.14510.1016/j.apsusc.2007.02.145 ↗
23. 10.1016/j.snb.2010.10.04510.1016/j.snb.2010.10.045 ↗
24. 10.1016/j.snb.2013.06.00410.1016/j.snb.2013.06.004 ↗
25. 10.1016/j.tsf.2009.10.15310.1016/j.tsf.2009.10.153 ↗