Structural relaxation probed by resistance drift in amorphous germanium
Source abstract
Abstract
Abstract Amorphous germanium films with different thicknesses are deposited by magnetron sputtering (MS) method. Optical band gap and surface resistance are characterized. Our analysis reveals that there are three kinds of structural relaxation (SR) that may occur in amorphous germanium (a-Ge), and they are spontaneous SR (SSR), annealing-induced SR (AISR), and medium range order (MRO)-to-continuous random network (CRN) Sr Samples all demonstrate a band gap widening after these kinds of Sr The properties and mechanisms of SSR, AISR, and MRO-to-CRN SR are elucidated, respectively, which sheds some light on the controversies about SR in a-Ge films. In addition, some experimental results about SSR and AISR are also provided.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Metallic Glasses and Amorphous Alloys · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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