Preparation of conductive film via a low temperature synthesis that enables simultaneous nitrogen doping and reduction of graphene oxide

A low temperature (-78 degrees C), one-pot synthesis that enables the simultaneous reduction of graphene oxide (G-O) and nitrogen doping of reduced graphene oxide (rG-O) is described. The method facilitates the effective removal of oxygen-containing functional groups in the G-O and introduces both 'graphitic' and 'pyridinic' nitrogen up to 4% in the corresponding product. The N-doped materials displayed relatively high powder electrical conductivities (up to 2.5 x 10(3) S m(-1)).