Electrical properties of InGaN thin films grown by RF sputtering at different temperatures, varying nitrogen and argon partial pressure ratios

Indium gallium nitride (InGaN) thin films of varying indium (In) and gallium (Ga) compositions have been fabricated on aluminosilicate glass and silicon (111) substrates using RF magnetron sputtering method at different growth temperatures, varied from 35 °C to 450 °C. Argon (Ar) and nitrogen (N2) are used as Inert and reactive gases respectively. Keeping the total pressure of gas mixture constant, partial pressures of N2 and Ar gases are varied. Ratio of Ar partial pressure to total pressure in the gas mixture is varied from 0 to 0.75. In this study, we present electrical properties of these InGaN thin films. Resistivity values of 2.6 × 10−5 to 1.68 × 10−2 Ω.cm, mobility values of 0.119 to 45.2 cm2/V.s, conductivity values of 0.595 × 103 to 37.3 × 103 mho/cm and bulk carrier concentration values −1020 to −1022/m3 are recorded that are measured through Hall-effect measurement technique.